Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12497174Application Date: 2009-07-02
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Publication No.: US07803658B2Publication Date: 2010-09-28
- Inventor: Yoshihiko Shimanuki
- Applicant: Yoshihiko Shimanuki
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-078581 20050318
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
The method of manufacture includes preparing a wiring board which has a front surface and an opposing rear surface, a plurality of conductive portions which are formed on the front and rear surfaces of the core material thereof, respectively, forming a first resist film and a second resist film on the front surface and rear surface of the core material, respectively, such that the conductive portions are exposed therefrom; mounting the semiconductor chip to the main surface side of the wiring board via adhesive material; electrically connecting the pads provided on the semiconductor chip, with the first conductive portions of the wiring board via bonding wires, respectively; and sealing the semiconductor chip and the bonding wires.
Public/Granted literature
- US20090269890A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-10-29
Information query
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