Invention Grant
- Patent Title: Organic thin-film transistor substrate and fabrication method therefor
- Patent Title (中): 有机薄膜晶体管基板及其制造方法
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Application No.: US11766597Application Date: 2007-06-21
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Publication No.: US07803669B2Publication Date: 2010-09-28
- Inventor: Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
- Applicant: Seung Hwan Cho , Bo Sung Kim , Keun Kyu Song
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0058697 20060628
- Main IPC: H01L21/339
- IPC: H01L21/339

Abstract:
An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
Public/Granted literature
- US20080001142A1 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR Public/Granted day:2008-01-03
Information query
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