Semiconductor device with a bulb-type recess gate

Invention Grant

US07803681B2 Semiconductor device with a bulb-type recess gate 有权

Title translation: 具有灯泡型凹槽的半导体器件

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Patent Title: Semiconductor device with a bulb-type recess gate
Patent Title (中): 具有灯泡型凹槽的半导体器件
Application No.: US11647328

Application Date: 2006-12-29
Publication No.: US07803681B2

Publication Date: 2010-09-28
Inventor: Dae Young Kim
Applicant: Dae Young Kim
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Townsend and Townsend and Crew LLP
Priority: KR10-2006-0086871 20060908
Main IPC: H01L21/336
IPC: H01L21/336

Semiconductor device with a bulb-type recess gate

Abstract:

When a recess of a bulb-type recess gate is formed, the recess formed in a device isolation region is formed to be separated from an edge of an active region. This structure thereby prevents damage of a semiconductor substrate of the edge of the active region and a defect during a Self Alignment Contact (SAC) process. As a result, characteristics and yield of devices improve.

Abstract(Chinese):

当形成灯泡型凹槽的凹部时，形成在器件隔离区域中的凹部被形成为与有源区域的边缘分离。因此，可以防止在自对准接触（SAC）过程中有源区边缘的半导体衬底损坏和缺陷。结果，器件的特性和产量提高。

Public/Granted literature

US20080064167A1 Semiconductor device with a bulb-type recess gate Public/Granted day:2008-03-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的