Invention Grant
US07803684B2 Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer
有权
具有通过选择性外延生长（SEG）层延伸的结的半导体器件的制造方法
- Patent Title: Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer
- Patent Title (中): 具有通过选择性外延生长（SEG）层延伸的结的半导体器件的制造方法
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Application No.: US12585588Application Date: 2009-09-18
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Publication No.: US07803684B2Publication Date: 2010-09-28
- Inventor: Se-myeong Jang , Woun-suck Yang , Jae-man Yoon , Hyun-ju Sung
- Applicant: Se-myeong Jang , Woun-suck Yang , Jae-man Yoon , Hyun-ju Sung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2004-0072475 20040910
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a protrusion extending from a substrate and a selective epitaxial growth (SEG) layer surrounding an upper portion of the protrusion, the SEG layer exposing sidewalls of a channel region of the protrusion.
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