Silicided base structure for high frequency transistors

Invention Grant

US07803685B2 Silicided base structure for high frequency transistors 有权

Title translation: 高频晶体管的硅基底座结构

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Patent Title: Silicided base structure for high frequency transistors
Patent Title (中): 高频晶体管的硅基底座结构
Application No.: US12147236

Application Date: 2008-06-26
Publication No.: US07803685B2

Publication Date: 2010-09-28
Inventor: Jay P. John , James A. Kirchgessner , Vishal P. Trivedi
Applicant: Jay P. John , James A. Kirchgessner , Vishal P. Trivedi
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
Agency: Ingrassia, Fisher & Lorenz, P.C.
Main IPC: H01L21/8222
IPC: H01L21/8222 ; H01L21/331

Silicided base structure for high frequency transistors

Abstract:

High frequency performance of (e.g., silicon) bipolar devices (100, 100″) is improved by reducing the extrinsic base resistance Rbx. Emitter (160), base (161) and collector (190) are formed in or on a semiconductor substrate (110). The emitter contact (154) has a portion (154′) that overhangs a portion (1293, 293″) of the extrinsic base contact (129), thereby forming a cave-like cavity (181, 181″) between the overhanging portion (154′) of the emitter contact (154) and the underlying regions (1293, 1293″) of the extrinsic base contact (129). When the emitter contact and the extrinsic base contact are silicided, some of the metal atoms forming the silicide penetrate into the cavity (181, 181″) so that the highly conductive silicided extrinsic base contact extends under the edge of the emitter contact (154′) closer to the base (161, 163) itself, thereby reducing Rbx. Smaller Rbx provides transistors with higher fMAX.

Abstract(Chinese):

（例如，硅）双极器件（100,100“）的高频性能通过降低外部基极电阻Rbx来改善。发射极（160），基极（161）和集电极（190）形成在半导体衬底（110）中或半导体衬底（110）上。发射极触点（154）具有一部分（154'），该部分突出于外部基极接触部分（129）的一部分（1293,293“），从而在悬垂部分（181,181”）之间形成洞穴状腔 154'）和外部基极触点（129）的下面的区域（1293,1293“）。当发射极接触和非本征基极接触被硅化时，形成硅化物的一些金属原子穿透到空腔（181,181“）中，使得高导电硅化物外部基极接触在发射极接触（154'）的边缘下延伸，）更靠近基部（161,163），从而减少Rbx。较小的Rbx提供具有更高fMAX的晶体管。

Public/Granted literature

US20090321879A1 SILICIDED BASE STRUCTURE FOR HIGH FREQUENCY TRANSISTORS Public/Granted day:2009-12-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺