Invention Grant
- Patent Title: Semiconductor device manufactured with a double shallow trench isolation process
- Patent Title (中): 半导体器件采用双浅沟槽隔离工艺制造
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Application No.: US12605941Application Date: 2009-10-26
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Publication No.: US07803689B2Publication Date: 2010-09-28
- Inventor: Seung Joo Baek
- Applicant: Seung Joo Baek
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2006-0060088 20060630
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope and a second active region having a positive slope. Additionally, the method includes applying a recess region and a bulb-type recess region to the above-extended active region so as to prevent generation of horns in the active regions. This structure results in improvement in effective channel length and area.
Public/Granted literature
- US20100041208A1 SEMICONDUCTOR DEVICE MANUFACTURED WITH A DOUBLE SHALLOW TRENCH ISOLATION PROCESS Public/Granted day:2010-02-18
Information query
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