Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device

Invention Grant

US07803719B2 Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device 有权

Title translation: 包括耦合电介质层和金属层的半导体器件，其制造方法和包含用于半导体器件的多个有机部件的钝化耦合材料

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Patent Title: Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
Patent Title (中): 包括耦合电介质层和金属层的半导体器件，其制造方法和包含用于半导体器件的多个有机部件的钝化耦合材料
Application No.: US12280477

Application Date: 2006-02-24
Publication No.: US07803719B2

Publication Date: 2010-09-28
Inventor: Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
Applicant: Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
Applicant Address: US TX Austin
Assignee: Freescale Semiconductor, Inc.
Current Assignee: Freescale Semiconductor, Inc.
Current Assignee Address: US TX Austin
International Application: PCT/EP2006/002852 WO 20060224
International Announcement: WO2007/095972 WO 20070830
Main IPC: H01L21/31
IPC: H01L21/31 ; H01L23/58

Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device

Abstract:

A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.

Abstract(Chinese):

用于钝化半导体器件中的电介质层的材料具有在随后的工艺步骤中允许或至少促进液相金属沉积的分子结构。预期的材料可以由多种有机组分构成。包括钝化耦合材料层的半导体器件，以及制造这种半导体器件的方法也被考虑。

Public/Granted literature

US20090115031A1 SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE Public/Granted day:2009-05-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择