Invention Grant
- Patent Title: Methods for forming a dielectric layer within trenches
- Patent Title (中): 在沟槽内形成电介质层的方法
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Application No.: US11876657Application Date: 2007-10-22
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Publication No.: US07803722B2Publication Date: 2010-09-28
- Inventor: Jingmei Liang
- Applicant: Jingmei Liang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc
- Current Assignee: Applied Materials, Inc
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/469
- IPC: H01L21/469
Abstract:
A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The silicon oxide or silicon-nitrogen containing layer is ultra-violet (UV) cured within an oxygen-containing environment.
Public/Granted literature
- US20090104790A1 Methods for Forming a Dielectric Layer Within Trenches Public/Granted day:2009-04-23
Information query
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