Invention Grant
US07804088B2 Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
有权
半导体装置，半导体装置的制造方法，显示装置以及显示装置的制造方法
- Patent Title: Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device
- Patent Title (中): 半导体装置，半导体装置的制造方法，显示装置以及显示装置的制造方法
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Application No.: US12418991Application Date: 2009-04-06
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Publication No.: US07804088B2Publication Date: 2010-09-28
- Inventor: Atsushi Tanaka , Ken-ichi Umeda , Kohei Higashi , Maki Nangu
- Applicant: Atsushi Tanaka , Ken-ichi Umeda , Kohei Higashi , Maki Nangu
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-098347 20080404
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
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