Invention Grant
US07804091B2 Thin-film transistor array, method of fabricating the same, and liquid crystal display device including the same
有权
薄膜晶体管阵列,其制造方法和包括该薄膜晶体管阵列的液晶显示装置
- Patent Title: Thin-film transistor array, method of fabricating the same, and liquid crystal display device including the same
- Patent Title (中): 薄膜晶体管阵列,其制造方法和包括该薄膜晶体管阵列的液晶显示装置
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Application No.: US11890677Application Date: 2007-08-07
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Publication No.: US07804091B2Publication Date: 2010-09-28
- Inventor: Kazushige Takechi , Mitsuru Nakata
- Applicant: Kazushige Takechi , Mitsuru Nakata
- Applicant Address: JP Tokyo JP Kanagawa
- Assignee: NEC Corporation,NEC LCD Technologies, Ltd.
- Current Assignee: NEC Corporation,NEC LCD Technologies, Ltd.
- Current Assignee Address: JP Tokyo JP Kanagawa
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Priority: JP2006-217273 20060809
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.
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Information query
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