Invention Grant
- Patent Title: Semiconductor device comprising planarized light-shielding island films for thin-film transistors
- Patent Title (中): 半导体器件包括用于薄膜晶体管的平坦化屏蔽岛膜
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Application No.: US11296386Application Date: 2005-12-08
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Publication No.: US07804096B2Publication Date: 2010-09-28
- Inventor: Hiroaki Jiroku
- Applicant: Hiroaki Jiroku
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-014510 20050121
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; H01L29/786
Abstract:
A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.
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