Invention Grant
- Patent Title: Polarization-reversed III-nitride light emitting device
- Patent Title (中): 极化反转的III族氮化物发光器件
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Application No.: US11080022Application Date: 2005-03-14
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Publication No.: US07804100B2Publication Date: 2010-09-28
- Inventor: Jonathan J. Wierer, Jr. , M. George Craford , John E. Epler , Michael R. Krames
- Applicant: Jonathan J. Wierer, Jr. , M. George Craford , John E. Epler , Michael R. Krames
- Applicant Address: US CA San Jose NL Eindhoven
- Assignee: Philips Lumileds Lighting Company, LLC,Koninklijke Philips Electronics N.V.
- Current Assignee: Philips Lumileds Lighting Company, LLC,Koninklijke Philips Electronics N.V.
- Current Assignee Address: US CA San Jose NL Eindhoven
- Main IPC: H01L27/15
- IPC: H01L27/15
Abstract:
A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
Public/Granted literature
- US20060202215A1 Polarization-reversed III-nitride light emitting device Public/Granted day:2006-09-14
Information query
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