Invention Grant
- Patent Title: Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same
- Patent Title (中): 异质结双极晶体管及其制造方法及使用其的功率放大器
-
Application No.: US11723769Application Date: 2007-03-22
-
Publication No.: US07804109B2Publication Date: 2010-09-28
- Inventor: Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
- Applicant: Isao Ohbu , Chushiro Kusano , Yasunari Umemoto , Atsushi Kurokawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- Priority: JP2004-010288 20040119; JP2004-287312 20040930
- Main IPC: H01L29/73
- IPC: H01L29/73
Abstract:
A heterojunction bipolar transistor with InGaP as the emitter layer and capable of both reliable electrical conduction and thermal stability wherein a GaAs layer is inserted between the InGaP emitter layer and AlGaAs ballast resistance layer, to prevent holes reverse-injected from the base layer from diffusing and reaching the AlGaAs ballast resistance layer.
Public/Granted literature
Information query
IPC分类:
