Nonvolatile semiconductor memory

Invention Grant

US07804123B2 Nonvolatile semiconductor memory 有权

Title translation: 非易失性半导体存储器

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Patent Title: Nonvolatile semiconductor memory
Patent Title (中): 非易失性半导体存储器
Application No.: US11958732

Application Date: 2007-12-18
Publication No.: US07804123B2

Publication Date: 2010-09-28
Inventor: Shoichi Watanabe
Applicant: Shoichi Watanabe
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Turocy & Watson, LLP
Priority: JP2006-341762 20061219
Main IPC: H01L29/788
IPC: H01L29/788

Abstract:

A nonvolatile semiconductor memory according to an example of the present invention includes first and second diffusion layers, a channel formed between the first and second diffusion layers, a gate insulating film formed on the channel, a floating gate electrode formed on the gate insulating film, an inter-gate insulating film formed on the floating gate electrode, and a control gate electrode formed on the inter-gate insulating film. An end portion of the inter-gate insulating film in a direction of channel length is on an inward side of a side surface of the floating gate electrode or a side surface of the control gate electrode.

Abstract(Chinese):

根据本发明实施例的非易失性半导体存储器包括第一和第二扩散层，形成在第一和第二扩散层之间的沟道，形成在沟道上的栅极绝缘膜，形成在栅极绝缘膜上的浮置栅电极，形成在浮置栅电极上的栅极间绝缘膜，以及形成在栅极间绝缘膜上的控制栅电极。栅极间绝缘膜的沟道长度方向的端部位于浮置栅电极的侧面的内侧或控制栅电极的侧面。

Public/Granted literature

US20080142870A1 NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2008-06-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的