Invention Grant
- Patent Title: Dense non-volatile memory array and method of fabrication
- Patent Title (中): 密集的非易失性存储器阵列和制造方法
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Application No.: US11489237Application Date: 2006-07-18
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Publication No.: US07804126B2Publication Date: 2010-09-28
- Inventor: Boaz Eitan , Ilan Bloom , Rustom Irani
- Applicant: Boaz Eitan , Ilan Bloom , Rustom Irani
- Applicant Address: IL Netariya
- Assignee: Saifun Semiconductors Ltd.
- Current Assignee: Saifun Semiconductors Ltd.
- Current Assignee Address: IL Netariya
- Agency: Eitan Mehulal Law Group
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
A non-volatile memory array has word lines spaced a sub-F (sub-minimum feature size F) width apart and bit lines generally perpendicular to the word lines. The present invention also includes a method for word-line patterning of a non-volatile memory array which includes generating sub-F word lines from mask generated elements with widths of at least a minimum feature size F.
Public/Granted literature
- US20070048940A1 Dense non-volatile memory array and method of fabrication Public/Granted day:2007-03-01
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