Invention Grant
US07804144B2 Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
有权
低温生长高品质超薄CoTiO3栅极电介质
- Patent Title: Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
- Patent Title (中): 低温生长高品质超薄CoTiO3栅极电介质
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Application No.: US12176949Application Date: 2008-07-21
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Publication No.: US07804144B2Publication Date: 2010-09-28
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable such that the gate oxides formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. Using a thermal evaporation technique to deposit the layer to be oxidized, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate oxide.
Public/Granted literature
- US20080283940A1 LOW-TEMPERATURE GROWN HIGH QUALITY ULTRA-THIN CoTiO3 GATE DIELECTRICS Public/Granted day:2008-11-20
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