Invention Grant
US07804150B2 Lateral trench gate FET with direct source-drain current path
有权
具有直接源极 - 漏极电流路径的横向栅极FET
- Patent Title: Lateral trench gate FET with direct source-drain current path
- Patent Title (中): 具有直接源极 - 漏极电流路径的横向栅极FET
-
Application No.: US11479149Application Date: 2006-06-29
-
Publication No.: US07804150B2Publication Date: 2010-09-28
- Inventor: Chang-ki Jeon , Gary Dolny
- Applicant: Chang-ki Jeon , Gary Dolny
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L27/108 ; H01L29/76 ; H01L31/119
Abstract:
A field effect transistor includes a trench gate extending into a semiconductor region. The trench gate has a front wall facing a drain region and a side wall perpendicular to the front wall. A channel region extends along the side wall of the trench gate, and a drift region extends at least between the drain region and the trench gate. The drift region includes a stack of alternating conductivity type silicon layers.
Public/Granted literature
- US20080001198A1 Lateral trench gate FET with direct source-drain current path Public/Granted day:2008-01-03
Information query
IPC分类:
