Invention Grant
- Patent Title: Internal charge transfer for circuits
- Patent Title (中): 电路的内部电荷转移
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Application No.: US12275521Application Date: 2008-11-21
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Publication No.: US07804329B2Publication Date: 2010-09-28
- Inventor: Choongyeun Cho , Elmer K. Corbin , Daeik Kim , Moon J. Kim
- Applicant: Choongyeun Cho , Elmer K. Corbin , Daeik Kim , Moon J. Kim
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Keohane & D'Alessandro PLLC
- Agent William E. Schiesser; Ronald A. D'Alessandro
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
The present invention enables fast transition between sleep and normal modes for circuits such as digital circuits. This invention utilizes chip internal charge transfer operations to put the circuit into fast sleep. The invention reduces external power involvement, and it expedites the sleep mode transition time by limiting charge transfers within the circuit. The fast sleep and fast wake-up enable more efficient power management of the system. This functionality also maximizes performance per power, and provides a more energy efficient computing architecture.
Public/Granted literature
- US20100127730A1 Internal charge transfer for circuits Public/Granted day:2010-05-27
Information query
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