Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12155283Application Date: 2008-06-02
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Publication No.: US07804331B2Publication Date: 2010-09-28
- Inventor: Hideki Sugimoto
- Applicant: Hideki Sugimoto
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2007-149349 20070605
- Main IPC: H03K19/20
- IPC: H03K19/20 ; H03K19/094

Abstract:
A semiconductor device according to an embodiment of the present invention includes an output stage circuit including a first conductive type first transistor and a second conductive type second transistor, the first conductive type first transistor being connected between a first power supply terminal and an output terminal, the second conductive type second transistor being connected between a second power supply terminal and the output terminal and having a leak current larger than that of the first transistor, and an input stage circuit outputting a logic value setting the first transistor to a non-conductive state and setting the second transistor to a conductive state in accordance with a logic circuit disable signal input when the output stage circuit is in a disable state.
Public/Granted literature
- US20080303551A1 Semiconductor device Public/Granted day:2008-12-11
Information query
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