Invention Grant
- Patent Title: Millimeter wave monolithic integrated circuits
- Patent Title (中): 毫米波单片集成电路
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Application No.: US12575389Application Date: 2009-10-07
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Publication No.: US07804366B2Publication Date: 2010-09-28
- Inventor: Kenneth W. Brown , Andrew K. Brown
- Applicant: Kenneth W. Brown , Andrew K. Brown
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: SoCal IP Law Group LLP
- Agent John E. Gunther; Steven C. Sereboff
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
A millimeter wave amplifier constructed on a substrate and configured for use at a frequency of 75 GHz or higher, may include four amplifier stages. A first inter-stage filter, resonant at an operating frequency of the amplifier, may couple the output of the first stage to the input of the second stage. A second inter-stage filter, resonant at the operating frequency, may couple the output of the second stage to the input of the third stage. A third inter-stage filter, resonant at the operating frequency, may couple the output of the third stage to the input of the fourth stage. A plurality of bias supply leads that couple a gate bias voltage and a drain bias voltage to each of the amplifier stages. A plurality of bias line filters, resonant at the operating frequency, may be connected from at least some of the bias supply leads to a ground plane.
Public/Granted literature
- US20100109776A1 Millimeter Wave Monolithic Integrated Circuits Public/Granted day:2010-05-06
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