Invention Grant
- Patent Title: Tunable resonator using film bulk acoustic resonator (FBAR)
- Patent Title (中): 使用膜体声波谐振器（FBAR）的可调谐谐振器
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Application No.: US12048481Application Date: 2008-03-14
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Publication No.: US07804382B2Publication Date: 2010-09-28
- Inventor: Jea-Shik Shin , Yun-Kwon Park , In-Sang Song , Duck-Hwan Kim , Chul-Soo Kim
- Applicant: Jea-Shik Shin , Yun-Kwon Park , In-Sang Song , Duck-Hwan Kim , Chul-Soo Kim
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2007-0111060 20071101
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/15 ; H03H9/54 ; H03H3/04
Abstract:
A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.
Public/Granted literature
- US20090115553A1 TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR) Public/Granted day:2009-05-07
Information query
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