A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.