Invention Grant
US07804667B2 Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
有权
具有Heusler合金层的磁阻元件,其具有添加元素浓度变化的区域
- Patent Title: Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
- Patent Title (中): 具有Heusler合金层的磁阻元件,其具有添加元素浓度变化的区域
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Application No.: US11725476Application Date: 2007-03-20
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Publication No.: US07804667B2Publication Date: 2010-09-28
- Inventor: Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
- Applicant: Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-144927 20060525
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
Public/Granted literature
- US20070274010A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same Public/Granted day:2007-11-29
Information query
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