Invention Grant
US07804667B2 Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration 有权
具有Heusler合金层的磁阻元件,其具有添加元素浓度变化的区域

Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
Abstract:
An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
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