Invention Grant
- Patent Title: Electrostatic discharge protection circuit
- Patent Title (中): 静电放电保护电路
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Application No.: US11937487Application Date: 2007-11-08
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Publication No.: US07804671B2Publication Date: 2010-09-28
- Inventor: Bob Cheng , Tony Ho , Bouryi Sze
- Applicant: Bob Cheng , Tony Ho , Bouryi Sze
- Applicant Address: TW Hsin-Tien, Taipei Hsien
- Assignee: VIA Technologies Inc.
- Current Assignee: VIA Technologies Inc.
- Current Assignee Address: TW Hsin-Tien, Taipei Hsien
- Agent Winston Hsu
- Priority: TW93112069A 20040429
- Main IPC: H02H1/00
- IPC: H02H1/00 ; H02H9/00 ; H01L23/62

Abstract:
An electrostatic discharge protection circuit has a substrate; a first P-well installed on the substrate and having a first P+-doped region and a first N+-doped region, both of which are connected to ground; a second P-well installed on the substrate and having a second P+-doped region and a second N+-doped region, both of which are connected to a power supply voltage; and a third P-well installed on the substrate and having a third N+-doped region, a third P+-doped region, and a fourth N+-doped region, all of which are for input/output signals.
Public/Granted literature
- US20080062607A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2008-03-13
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