Invention Grant
US07804703B2 Phase change memory device having Schottky diode and method of fabricating the same
有权
具有肖特基二极管的相变存储器件及其制造方法
- Patent Title: Phase change memory device having Schottky diode and method of fabricating the same
- Patent Title (中): 具有肖特基二极管的相变存储器件及其制造方法
-
Application No.: US12120583Application Date: 2008-05-14
-
Publication No.: US07804703B2Publication Date: 2010-09-28
- Inventor: Dae-Won Ha , Gi-Tae Jeong
- Applicant: Dae-Won Ha , Gi-Tae Jeong
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2007-0077158 20070731
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A phase change memory device includes wordlines extending along a direction on a semiconductor substrate. Low concentration semiconductor patterns are disposed on the wordlines. Node electrodes are disposed on the low concentration semiconductor patterns. Schottky diodes are disposed between the low concentration semiconductor patterns and the node electrodes. Phase change resistors are disposed on the node electrodes.
Public/Granted literature
- US20090034319A1 PHASE CHANGE MEMORY DEVICE HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-02-05
Information query
