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US07804704B2 PMC memory with improved retention time and writing speed 有权
PMC内存具有更好的保留时间和写入速度

PMC memory with improved retention time and writing speed
Abstract:
A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the memory cell-during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.
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