Invention Grant
- Patent Title: PMC memory with improved retention time and writing speed
- Patent Title (中): PMC内存具有更好的保留时间和写入速度
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Application No.: US11722761Application Date: 2005-12-20
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Publication No.: US07804704B2Publication Date: 2010-09-28
- Inventor: Veronique Sousa
- Applicant: Veronique Sousa
- Applicant Address: FR Paris
- Assignee: Commissariat A l'Energie Atomique
- Current Assignee: Commissariat A l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0453210 20041223
- International Application: PCT/FR2005/051114 WO 20051220
- International Announcement: WO2006/070151 WO 20060706
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A PMC memory including: a memory cell, the memory cell including, an active zone, a heating element disposed outside of the active zone, and at least two contacts that apply a writing voltage to the memory cell, wherein the heating element transitionally heats the memory cell-during a writing process in the memory cell to a writing temperature higher than an operating temperature of the memory cell outside the writing process.
Public/Granted literature
- US20080007997A1 Pmc Memory With Improved Retention Time And Writing Speed Public/Granted day:2008-01-10
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