Invention Grant
US07804722B2 Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage 有权
电源电路和包括相同的闪存器件以及提供工作电压的方法

  • Patent Title: Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage
  • Patent Title (中): 电源电路和包括相同的闪存器件以及提供工作电压的方法
  • Application No.: US11951164
    Application Date: 2007-12-05
  • Publication No.: US07804722B2
    Publication Date: 2010-09-28
  • Inventor: Chae-Kyu Jang
  • Applicant: Chae-Kyu Jang
  • Applicant Address: KR Icheon-si
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Icheon-si
  • Agency: Townsend and Townsend and Crew LLP
  • Priority: KR10-2007-0074544 20070725; KR10-2007-0105624 20071019
  • Main IPC: G11C5/14
  • IPC: G11C5/14
Voltage supply circuit and flash memory device including the same, and method of supplying operating voltage
Abstract:
A voltage supply circuit includes a voltage generator and a controller. The voltage generator is configured to pump an externally input voltage and store the pumped external voltage as a first voltage having a set voltage level, before power-up begins, or pump the external voltage, add the pumped voltage to the stored voltage, and output the added voltage as an operating voltage. The controller is configured to output a first control signal to drive the voltage generator or stop operation of the voltage generator, according to an operating state.
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