Invention Grant
- Patent Title: Semiconductor memory device with signal aligning circuit
- Patent Title (中): 具有信号对准电路的半导体存储器件
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Application No.: US11478092Application Date: 2006-06-30
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Publication No.: US07804723B2Publication Date: 2010-09-28
- Inventor: Hwang Hur , Chang-Ho Do
- Applicant: Hwang Hur , Chang-Ho Do
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2005-0090855 20050928; KR10-2006-0033765 20060413
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A signal aligning circuit includes a plurality of pads receiving input signals in parallel 1 bit by 1 bit; a first transferring unit for transferring the input signals as first signals in synchronization with a first clock signal of an internal clock, and transferring the input signals as second signals in synchronization with a second clock signal of the internal clock; a second transferring unit for transferring the first signals in synchronization with the second clock signal of the internal clock; and an aligning unit for aligning the first and second signals transferred from the first and second transferring units and outputting the aligned signal as output signals.
Public/Granted literature
- US20070126479A1 Semiconductor memory device with signal aligning circuit Public/Granted day:2007-06-07
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