A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.