Invention Grant
- Patent Title: IC chip design modeling using perimeter density to electrical characteristic correlation
- Patent Title (中): IC芯片设计建模使用周边密度与电气特性相关
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Application No.: US12031734Application Date: 2008-02-15
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Publication No.: US07805693B2Publication Date: 2010-09-28
- Inventor: Laura S. Chadwick , James A. Culp , Anthony D. Polson
- Applicant: Laura S. Chadwick , James A. Culp , Anthony D. Polson
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Richard Kotulak
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
IC chip design modeling using perimeter density to an electrical characteristic correlation is disclosed. In one embodiment, a method may include determining a perimeter density of conductive structure within each region of a plurality of regions of an integrated circuit (IC) chip design; correlating a measured electrical characteristic within a respective region of an IC chip that is based on the IC chip design to the perimeter density; and modeling the IC chip design based on the correlation.
Public/Granted literature
- US20090210834A1 IC CHIP DESIGN MODELING USING PERIMETER DENSITY TO ELECTRICAL CHARACTERISTIC CORRELATION Public/Granted day:2009-08-20
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