Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
- Patent Title (中): 基板处理方法和基板处理装置
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Application No.: US11394337Application Date: 2006-03-31
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Publication No.: US07806989B2Publication Date: 2010-10-05
- Inventor: Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
- Applicant: Kenji Sekiguchi , Noritaka Uchida , Satoru Tanaka , Hiroki Ohno
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2005-183549 20050623; JP2005-380090 20051228
- Main IPC: B08B3/00
- IPC: B08B3/00 ; B08B7/04

Abstract:
A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.
Public/Granted literature
- US20070017555A1 Substrate Processing method and substrate processing apparatus Public/Granted day:2007-01-25
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