Invention Grant
US07806994B2 Electronic package formed using low-temperature active solder including indium, bismuth, and/or cadmium
有权
使用包括铟,铋和/或镉的低温有源焊料形成的电子封装
- Patent Title: Electronic package formed using low-temperature active solder including indium, bismuth, and/or cadmium
- Patent Title (中): 使用包括铟,铋和/或镉的低温有源焊料形成的电子封装
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Application No.: US11579413Application Date: 2005-05-04
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Publication No.: US07806994B2Publication Date: 2010-10-05
- Inventor: Ronald W. Smith , Randall Redd
- Applicant: Ronald W. Smith , Randall Redd
- Applicant Address: US PA Lansdale
- Assignee: S-Bond Technologies, LLC
- Current Assignee: S-Bond Technologies, LLC
- Current Assignee Address: US PA Lansdale
- Agency: Stradley Ronon Stevens & Young, LLP
- International Application: PCT/US2005/015534 WO 20050504
- International Announcement: WO2005/122252 WO 20051222
- Main IPC: C22C13/00
- IPC: C22C13/00

Abstract:
An active solder alloy, an electronic device package including the active solder alloy bonding an electronic device to a substrate, and a method of forming high-strength joints by soldering using the solder alloy. The alloy contains up to about 10% by weight of an element or a mixture of elements selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, or tantalum; between about 0.1 and 5% by weight of an element or a mixture of elements selected from the group of the lanthanides (rare earths); between about 0.01 and 1% by weight of gallium up to about 10% by weight of silver; up to about 2% by weight of magnesium; and a remainder consisting of tin, bismuth, indium, cadmium, or a mixture of two or more of these elements. The alloy enables low-temperature (less than about 180° C.) soldering within relatively narrow melting ranges (less than about 10° C.).
Public/Granted literature
- US20070228109A1 Electronic Package Formed Using Low-Temperature Active Solder Including Indium, Bismuth, and/or Cadmium Public/Granted day:2007-10-04
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