Invention Grant
- Patent Title: Method of manufacturing silicon carbide
- Patent Title (中): 制造碳化硅的方法
-
Application No.: US11336811Application Date: 2006-01-23
-
Publication No.: US07807123B2Publication Date: 2010-10-05
- Inventor: Katsuhiko Inoue
- Applicant: Katsuhiko Inoue
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-021614 20050128
- Main IPC: C01B31/36
- IPC: C01B31/36

Abstract:
A method of manufacturing silicon carbide including reacting, in a temperature range of 370 to 800° C., (A) one selected from the group consisting of an alloy containing at least an Si element and one or more kinds of transition metal elements, a mixture containing metal silicon powder and transition metal powder, and a mixture of metal silicon powder and a transition metal compound with (B) one or more kinds of substituted or unsubstituted hydrocarbons selected from the group consisting of a chain saturated hydrocarbon, a chain unsaturated hydrocarbon, a cyclic saturated hydrocarbon, an alcohol, and an aromatic hydrocarbon. The manufacturing method can provide a sufficient conversion ratio from raw materials at low temperatures and powdery silicon carbide having a small particle size and small amounts of impurities.
Public/Granted literature
- US20060171873A1 Method of manufacturing silicon carbide Public/Granted day:2006-08-03
Information query