Invention Grant
- Patent Title: Precursors having open ligands for ruthenium containing films deposition
- Patent Title (中): 含有含钌膜的开放配体的前体沉积
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Application No.: US11835968Application Date: 2007-08-08
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Publication No.: US07807223B2Publication Date: 2010-10-05
- Inventor: Christian Dussarrat , Julien Gatineau
- Applicant: Christian Dussarrat , Julien Gatineau
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Priority: EP6300864 20060808
- Main IPC: C23C16/18
- IPC: C23C16/18 ; C23C16/40
Abstract:
Ruthenium containing precursors for ruthenium containing films deposition comprising a ruthenium precursor selected from the group essentially consisting of Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2X2Ru(diketonate)2(amidinate)2, their derivatives, and any mixture thereof.
Public/Granted literature
- US20080107812A1 PRECURSORS HAVING OPEN LIGANDS FOR RUTHENIUM CONTAINING FILMS DEPOSITION Public/Granted day:2008-05-08
Information query
IPC分类:
