Invention Grant
- Patent Title: High density plasma non-stoichiometric SiOxNy films
- Patent Title (中): 高密度等离子体非化学计量的SiOxNy薄膜
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Application No.: US11698623Application Date: 2007-01-26
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Publication No.: US07807225B2Publication Date: 2010-10-05
- Inventor: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- Applicant: Pooran Chandra Joshi , Apostolos T. Voutsas , John W. Hartzell
- Applicant Address: US WA Camas
- Assignee: Sharp Laboratories of America, Inc.
- Current Assignee: Sharp Laboratories of America, Inc.
- Current Assignee Address: US WA Camas
- Agency: Law Office of Gerald Maliszewski
- Agent Gerald Maliszewski
- Main IPC: C23C16/00
- IPC: C23C16/00
Abstract:
A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
Public/Granted literature
- US20070155137A1 High density plasma non-stoichiometric SiOxNy films Public/Granted day:2007-07-05
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