Invention Grant
US07807233B2 Method of forming a TEOS cap layer at low temperature and reduced deposition rate
有权
在低温下形成TEOS盖层并降低沉积速率的方法
- Patent Title: Method of forming a TEOS cap layer at low temperature and reduced deposition rate
- Patent Title (中): 在低温下形成TEOS盖层并降低沉积速率的方法
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Application No.: US10835411Application Date: 2004-04-29
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Publication No.: US07807233B2Publication Date: 2010-10-05
- Inventor: Hartmut Ruelke , Katja Huy , Karla Romero
- Applicant: Hartmut Ruelke , Katja Huy , Karla Romero
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE10339988 20030829
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/00
Abstract:
A method for forming a silicon dioxide cap layer for a carbon hard mask layer for patterning of polysilicon line features having critical dimensions of 50 nm and less is provided. To this end, a low temperature plasma enhanced CVD process is used in which the deposition rate is maintained low to provide improved controllability of the layer thickness and, thus, of the optical characteristics of the silicon dioxide layer.
Public/Granted literature
- US20050048222A1 Method of forming a teos cap layer at low temperature and reduced deposition rate Public/Granted day:2005-03-03
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