Invention Grant
- Patent Title: Chemical mechanical polishing pad having secondary polishing medium capacity control grooves
- Patent Title (中): 具有二次抛光介质容量控制槽的化学机械抛光垫
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Application No.: US11437050Application Date: 2006-05-19
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Publication No.: US07807252B2Publication Date: 2010-10-05
- Inventor: Jeffrey J. Hendron , Gregory P. Muldowney
- Applicant: Jeffrey J. Hendron , Gregory P. Muldowney
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent Blake T. Biederman
- Main IPC: B24B3/30
- IPC: B24B3/30 ; B24B1/00
Abstract:
A chemical mechanical polishing pad (104, 400) that includes a polishing layer (108, 420, 500) having a set of primary grooves (124, 408, 516) formed in a polishing surface (110, 428, 520) of the pad. The pad also includes a set of secondary grooves (128, 404, 504) that become selectively active as a function of the wear of the polishing layer from polishing.
Public/Granted literature
- US20060286350A1 Chemical mechanical polishing pad having secondary polishing medium capacity control grooves Public/Granted day:2006-12-21
Information query
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