Invention Grant
- Patent Title: Photomask including contrast enhancement layer and method of making same
- Patent Title (中): 光掩模包括对比度增强层及其制作方法
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Application No.: US11729580Application Date: 2007-03-29
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Publication No.: US07807319B2Publication Date: 2010-10-05
- Inventor: Wen-Hao Cheng
- Applicant: Wen-Hao Cheng
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Scott M. Lane
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A photomask and a method of making same. The photomask includes a plate defining transparent regions in a predetermined pattern and opaque regions, the transparent regions adapted to transmit light therethrough; and a contrast enhancement layer disposed over an entire surface of at least one of the transparent regions and the opaque regions.
Public/Granted literature
- US20080241710A1 Photomask including contrast enhancement layer and method of making same Public/Granted day:2008-10-02
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