Invention Grant
US07807319B2 Photomask including contrast enhancement layer and method of making same 有权
光掩模包括对比度增强层及其制作方法

  • Patent Title: Photomask including contrast enhancement layer and method of making same
  • Patent Title (中): 光掩模包括对比度增强层及其制作方法
  • Application No.: US11729580
    Application Date: 2007-03-29
  • Publication No.: US07807319B2
    Publication Date: 2010-10-05
  • Inventor: Wen-Hao Cheng
  • Applicant: Wen-Hao Cheng
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agent Scott M. Lane
  • Main IPC: G03F1/00
  • IPC: G03F1/00
Photomask including contrast enhancement layer and method of making same
Abstract:
A photomask and a method of making same. The photomask includes a plate defining transparent regions in a predetermined pattern and opaque regions, the transparent regions adapted to transmit light therethrough; and a contrast enhancement layer disposed over an entire surface of at least one of the transparent regions and the opaque regions.
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