A photomask for double exposure, and a double exposure method using the same are disclosed. The photomask for double exposure comprises a mask substrate divided into first and second regions equally arranged to upper and lower sides on different sides, respectively, a first mask pattern formed on the first region of the mask substrate, and a second mask pattern formed on the second region of the mask substrate. The photomask and the double exposure method using the same enable a finer photoresist pattern to be formed on a semiconductor wafer, while minimizing reduction in yield and productivity due to misalignment and replacement.