Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US11468080Application Date: 2006-08-29
-
Publication No.: US07807336B2Publication Date: 2010-10-05
- Inventor: Sung Koo Lee , Jae Chang Jung
- Applicant: Sung Koo Lee , Jae Chang Jung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2005-0132109 20051228; KR10-2006-0069759 20060725
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.
Public/Granted literature
- US20070148602A1 Method for Manufacturing Semiconductor Device Public/Granted day:2007-06-28
Information query
