Invention Grant
- Patent Title: Nonvolatile memory device and fabrication method thereof
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US12690831Application Date: 2010-01-20
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Publication No.: US07807478B2Publication Date: 2010-10-05
- Inventor: Tae Hoon Kim
- Applicant: Tae Hoon Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2006-0092359 20060922
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device
Public/Granted literature
- US20100124810A1 Nonvolatile Memory Device and Fabrication Method Thereof Public/Granted day:2010-05-20
Information query
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