Invention Grant
- Patent Title: Method for transferring wafers
- Patent Title (中): 转移晶圆的方法
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Application No.: US11628615Application Date: 2005-06-02
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Publication No.: US07807482B2Publication Date: 2010-10-05
- Inventor: Bernard Aspar , Chrystelle Lagahe-Blanchard
- Applicant: Bernard Aspar , Chrystelle Lagahe-Blanchard
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon On Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon On Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Nixon Peabody LLP
- Priority: FR0451085 20040602
- International Application: PCT/FR2005/050411 WO 20050602
- International Announcement: WO2005/124826 WO 20051229
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
The invention concerns a method for preparing a thin layer (28) or a chip to be transferred onto another substrate, this method including the realization, above the surface of said thin layer or said chip, of at least one layer, called adhesive layer (25), and of at least one layer, called first barrier layer (22), the adhesive layer being made of a material of which etching presents selectivity in relation to the material of the barrier layer.
Public/Granted literature
- US20080254596A1 Method for Transferring Wafers Public/Granted day:2008-10-16
Information query
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