Invention Grant
- Patent Title: Field effect transistor and its manufacturing method
- Patent Title (中): 场效应晶体管及其制造方法
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Application No.: US11194597Application Date: 2005-08-02
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Publication No.: US07807496B2Publication Date: 2010-10-05
- Inventor: Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
- Applicant: Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Hitachi America, Ltd.
- Priority: JP2004-335779 20041119
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
Public/Granted literature
- US20060110847A1 Field effect transistor and its manufacturing method Public/Granted day:2006-05-25
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