Invention Grant
US07807500B2 Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer
有权
SOI基板的制造方法以及包括多孔层的选择性形成的半导体装置的制造方法
- Patent Title: Process for production of SOI substrate and process for production of semiconductor device including the selective forming of porous layer
- Patent Title (中): SOI基板的制造方法以及包括多孔层的选择性形成的半导体装置的制造方法
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Application No.: US12170663Application Date: 2008-07-10
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Publication No.: US07807500B2Publication Date: 2010-10-05
- Inventor: Takeshi Fukunaga
- Applicant: Takeshi Fukunaga
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP1998-214125 19980729
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/76
Abstract:
A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
Public/Granted literature
- US20080286940A1 PROCESS FOR PRODUCTION OF SOI SUBSTRATE AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE Public/Granted day:2008-11-20
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