Invention Grant
US07807507B2 Backgrinding-underfill film, method of forming the same, semiconductor package using the backgrinding-underfill film, and method of forming the semiconductor package
有权
背面研磨 - 底部填充膜，其形成方法，使用背面研磨 - 底部填充膜的半导体封装以及形成半导体封装的方法
- Patent Title: Backgrinding-underfill film, method of forming the same, semiconductor package using the backgrinding-underfill film, and method of forming the semiconductor package
- Patent Title (中): 背面研磨 - 底部填充膜，其形成方法，使用背面研磨 - 底部填充膜的半导体封装以及形成半导体封装的方法
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Application No.: US12476601Application Date: 2009-06-02
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Publication No.: US07807507B2Publication Date: 2010-10-05
- Inventor: Won-Keun Kim , Myung-Kee Chung , Myung-Sung Kang
- Applicant: Won-Keun Kim , Myung-Kee Chung , Myung-Sung Kang
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0081369 20080820
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
A semiconductor package forming method includes mounting a backgrinding-underfill film which includes a laminated backgrinding film and a laminated underfill film on a semiconductor wafer so that the underfill film adheres to a front side of the semiconductor wafer; backgrinding a back side of the semiconductor wafer on which the backgrinding-underfill film has been mounted and removing the backgrinding film of the backgrinding-underfill film from the semiconductor wafer. The method further includes dicing the semiconductor wafer from which the backgrinding film has been removed, so that semiconductor chips are separated from the semiconductor wafer.
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