Invention Grant
- Patent Title: Semiconductor device having storage node electrode with protection film thereon and method of fabricating the same
- Patent Title (中): 具有保护膜的存储节点电极的半导体装置及其制造方法
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Application No.: US11562369Application Date: 2006-11-21
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Publication No.: US07807542B2Publication Date: 2010-10-05
- Inventor: Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hye-Sun Kim
- Applicant: Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hye-Sun Kim
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2005-0111995 20051122
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.
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