Invention Grant
US07807546B2 SRAM cell having stepped boundary regions and methods of fabrication
有权
具有阶梯边界区域的SRAM单元和制造方法
- Patent Title: SRAM cell having stepped boundary regions and methods of fabrication
- Patent Title (中): 具有阶梯边界区域的SRAM单元和制造方法
-
Application No.: US11486889Application Date: 2006-07-13
-
Publication No.: US07807546B2Publication Date: 2010-10-05
- Inventor: Wen-Chin Lee , Yee-Chia Yeo
- Applicant: Wen-Chin Lee , Yee-Chia Yeo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a semiconductor material. The isolation region is also in the substrate, adjacent the active region and comprises an insulating material. The active region and isolation region form a surface having a step therein. The semiconductor further comprises a dielectric material formed over the step. The dielectric material has a dielectric constant greater than about 8.
Public/Granted literature
- US20060252227A1 SRAM cell having stepped boundary regions and methods of fabrication Public/Granted day:2006-11-09
Information query
IPC分类:
