Invention Grant
- Patent Title: Method of making MEMS wafers
- Patent Title (中): 制造MEMS晶圆的方法
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Application No.: US11424059Application Date: 2006-06-14
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Publication No.: US07807550B2Publication Date: 2010-10-05
- Inventor: Luc Ouellet , Mamur Chowdhury
- Applicant: Luc Ouellet , Mamur Chowdhury
- Applicant Address: CA Waterloo, Ontario
- Assignee: DALSA Semiconductor Inc.
- Current Assignee: DALSA Semiconductor Inc.
- Current Assignee Address: CA Waterloo, Ontario
- Agency: Marks & Clerk
- Agent Richard J. Mitchell
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A wafer level package for a MEMS device is made by bonding a MEMS wafer and a lid wafer together to form a hermetically sealed cavity. One or more vias filled with conductive or semiconductive material is etched one of the wafers to form one or more rods extending through the wafer. The rods provide electrical connection to components within the hermetically sealed cavity.
Public/Granted literature
- US20070015341A1 METHOD OF MAKING MEMS WAFERS Public/Granted day:2007-01-18
Information query
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