Invention Grant
- Patent Title: Substrate heating apparatus and semiconductor fabrication method
- Patent Title (中): 基板加热装置及半导体制造方法
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Application No.: US11951807Application Date: 2007-12-06
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Publication No.: US07807553B2Publication Date: 2010-10-05
- Inventor: Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
- Applicant: Masami Shibagaki , Kenji Numajiri , Akihiro Egami , Akira Kumagai , Susumu Akiyama
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-331251 20061208; JP2007-294859 20071113
- Main IPC: H01L21/265
- IPC: H01L21/265 ; C23C16/00
Abstract:
A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.
Public/Granted literature
- US20080213988A1 SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD Public/Granted day:2008-09-04
Information query
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