Invention Grant
US07807576B2 Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
有权
用于形成用于沟槽栅极器件的厚底部电介质（TBD）的结构和方法
- Patent Title: Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
- Patent Title (中): 用于形成用于沟槽栅极器件的厚底部电介质（TBD）的结构和方法
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Application No.: US12143510Application Date: 2008-06-20
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Publication No.: US07807576B2Publication Date: 2010-10-05
- Inventor: James Pan
- Applicant: James Pan
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
A semiconductor structure which includes a trench gate FET is formed as follows. A plurality of trenches is formed in a semiconductor region using a mask. The mask includes (i) a first insulating layer over a surface of the semiconductor region, (ii) a first oxidation barrier layer over the first insulating layer, and (iii) a second insulating layer over the first oxidation barrier layer. A thick bottom dielectric (TBD) is formed along the bottom of each trench. The first oxidation barrier layer prevents formation of a dielectric layer along the surface of the semiconductor region during formation of the TBD.
Public/Granted literature
- US20090315083A1 Structure and Method for Forming a Thick Bottom Dielectric (TBD) for Trench-Gate Devices Public/Granted day:2009-12-24
Information query
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